Heating achieved by focusing radiation from a lamp using elliptical mirrors.

Single crystal growth of :
high temperature superconductors
dielectric and magnetic materials
pure metals and metallic compounds

Capable of high-temperature operation free of contamination from a hot crucible. Extremely high purity can be achieved.

User-selectable atmosphere and pressure.

Viewing screen allows monitoring of crystal growth process.

Model No.		SC1
		MDH11020	MDH20020
Temp. range		Max. 2050°C 1.5kW × 2pcs	Max. 2150°C 3.5kW × 2pcs
Furnace	Type	Double elliptic mirrors
	Size	Standard (Medium)
Crystal diameter (ex.)		φ6 (Al2O3 + Cr2O3)	φ8 (MgAl2O4 + CoO)
Shaft Drive	Lower stroke	150mm
	Upper stroke	250mm
	Growth of crystals (Low speed)	0.5 - 50mm/hr
	Gap sdjustment (Middle speed)	1 - 300mm/min
	Preparatory operation (High speed)	300mm/min
	Rotation rate	5 - 60r/min (50Hz)
Lamp Power	Power supply	DC110V, 20A × 2sets	DC200V, 20A × 2sets
	DC power supply	0.005% of span + 3mV
	Total stability	± 0.1% of span
Atmosphere	Pressure	Max. 300kPa standard (option 970kPa)
	Flow rate	0.5 - 5 L/min N2 Gas (Flow meter included)
Dimensions (mm)	Main unit	1140W × 1170D × 2250H
	PC rack	600W × 625D × 1200H
	DC power supply	Built into main unit
	Control Box	Built into main unit
Ceiling height		Approx. 2700mm
Utilities	Power supply (50/60Hz)	φ3 AC200V 60A	φ3 AC200V 75A
	Water	Approx. 5 - 8 L/min

Model No.		SC2
		EDH11020	MDH11020	MDH20020
Temp. range		Max. 2050°C		Max. 2150°C
Furnace	Type	Double elliptic mirrors
	Size	Small (E)	Standard (Medium)
Crystal diameter (ex.)		φ6 (Al2O3 + Cr2O3)		φ8 (MgAl2O4 + CoO)
Shaft Drive	Lower stroke	150mm
	Upper stroke	± 25mm
	Growth of crystals (Low speed)	1.0 - 20mm/hr
	Gap sdjustment (Middle speed)	Low speed : 0.15 - 2.9mm/hr High speed : 22mm/min
	Preparatory operation (High speed)	100mm/min (50Hz)
	Rotation rate	5 - 60r/min (50Hz)
Lamp Power	Power supply	DC110V, 20A - 2sets		DC200V, 20A - 2sets
	DC power supply	0.005% of span + 3mV
	Total stability	± 0.1% of span
Atmosphere	Pressure	Max. 300kPa (option 970kPa)
	Flow rate	0.5 - 5 L/min N2 Gas (Flow meter included)
Dimensions (mm)	Main unit	1000W × 1000D × 1800H
	PC rack	600W × 825D × 1200H
	DC power supply	630W × 510D × 700H		430W × 500D × 610H - 2 units
	Control Box	Built into main unit
Ceiling height		Approx. 2400mm
Utilities	Power supply (50/60Hz)	φ3 AC200V 60A		φ3 AC200V 75A
	Water	Approx. 5 - 8 L/min

Name	Outline
Hydrostatic press unit	For compressing powder to rod-shape specimen.
Mass flow controller	A mass flow controller can be supplied for mixing two different gases for use in the crystal growth.
Cold trap	Using the cold trap helps keep the quartz tube free of contamination due to evaporants. This ensures stable heating performance during single-crystal growth. The cold trap is particularity effective for highly volatile materials. [Results] Without Cold trap, it is in some cases necessary to the adjust the power of the lamps frequently during the crystal growth because of the gradual contamination of the quartz tube. Cold trap improves the stability of the crystal-growth condition by keeping the quartz tube clean. Cold trap helps to prolong the lifetime of a quartz tube, thus cutting down the running cost. [ Actual example for growing single crystals of Sr2RuO4 ] Before using Cold trap (repeatable usage of a quartz tube: 4 to 5 times) After using Cold trap (repeatable usage of a quartz tube: more than 10 times) [ Actual example for growing single crystals of Sr3Ru2O7 ] Before using Cold trap (repeatable usage of a quartz tube: 2 to 3 times) After using Cold trap (repeatable usage of a quartz tube: 8 to 9 times